半导体光子学与技术, 2003, 9 (2): 75, 网络出版: 2011-08-11  

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
作者单位
Microelectronics R&D Center, Chinese Academy of Sciences, Beijing 100029, CHN
摘要
Abstract
The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage.

JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75. JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!