半导体光子学与技术, 2003, 9 (2): 75, 网络出版: 2011-08-11
Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
摘要
Abstract
The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage.
JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75. JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75.