半导体光子学与技术, 2003, 9 (3): 182, 网络出版: 2011-08-11
Investigation on the Luminescent Properties of SiC
Investigation on the Luminescent Properties of SiC
摘要
Abstract
Silicon carbide (SiC) is an excellent microelectronic material used to fabricate high frequency, high temperature, high power and non- volatile memory devices. But due to its indirect band gap,SiC based LED can t emit light so efficiently as GaN based LED, so people are eager to seek effective means to improve its luminescence efficiency. Amorphous SiC, porous crystalline SiC, nanometer SiC produced by CVD methods and porous SiC formed by ion implantation are investigated, and great progresses have been gained during the latest few years, which make SiC a promising material for developing OEIC.
WANG Qiang, LI Yu-guo, SHI Li-wei, SHUN Hai-bo, XUE Cheng-shan. Investigation on the Luminescent Properties of SiC[J]. 半导体光子学与技术, 2003, 9(3): 182. WANG Qiang, LI Yu-guo, SHI Li-wei, SHUN Hai-bo, XUE Cheng-shan. Investigation on the Luminescent Properties of SiC[J]. Semiconductor Photonics and Technology, 2003, 9(3): 182.