半导体光子学与技术, 2004, 10 (1): 35, 网络出版: 2011-08-15  

850nm Implant-confined VCSEL Temperature Characteristics

850nm Implant-confined VCSEL Temperature Characteristics
作者单位
Nation. Key Lab. of High Power Semiconductor Lasers, Changchun University of Sci. and Technol., Changchun 130022, CHN
摘要
2003-09-15
Abstract
The temperature characteristics of VCSEL using proton implantation are described, compared with its edge-emitting counterpart. Implant-confined VCSEL operation has been realized up to 120℃. These records of high operating temperature are caused by high characteristic temperature. The relevant physical mechanisms including their dependence on temperature and carrier density are considered. The temperature sensitivity of the threshold current is not strongly increasing with higher temperature.

LI Lin, ZHONG Jing-chang, LIU Wen-li, ZHAO Ying-jie, ZHANG Yong-ming, SU Wei. 850nm Implant-confined VCSEL Temperature Characteristics[J]. 半导体光子学与技术, 2004, 10(1): 35. LI Lin, ZHONG Jing-chang, LIU Wen-li, ZHAO Ying-jie, ZHANG Yong-ming, SU Wei. 850nm Implant-confined VCSEL Temperature Characteristics[J]. Semiconductor Photonics and Technology, 2004, 10(1): 35.

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