半导体光子学与技术, 2004, 10 (1): 38, 网络出版: 2011-08-15
Luminescent Properties of Nanometer Si with Embedded Structure
Luminescent Properties of Nanometer Si with Embedded Structure
摘要
Abstract
Blue luminescence at about 431 nm is obtained from epitaxial silicon after C+implantation, annealing in hydrogen ambience and chemical etching sequentially. When annealed in nitrogen ambience and etched accordingly, there is a much narrower peak at about 430 nm. During C+implantation, C= O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing, at last, nanometer silicon with embedded structure is formed, which contributes to the blue emission.
LI Zhong, XIN Hua-mei, WANG Qiang, LI Yu-guo, LI Hui-qi. Luminescent Properties of Nanometer Si with Embedded Structure[J]. 半导体光子学与技术, 2004, 10(1): 38. LI Zhong, XIN Hua-mei, WANG Qiang, LI Yu-guo1, LI Hui-qi. Luminescent Properties of Nanometer Si with Embedded Structure[J]. Semiconductor Photonics and Technology, 2004, 10(1): 38.