半导体光子学与技术, 2004, 10 (2): 73, 网络出版: 2011-08-15
Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering
Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering
摘要
Abstract
InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity - free vacancy disordering. The luminescent characteristics were investigated using photoluminescence and photoreflectance,from which the band gap blue shift was observed.Si3N4,SiO2and SOG were used for the dielectric layer to enhance intermixing from the outdiffusion of group III atoms.All samples were annealed by rapid thermal annealing.The results indicate that the band gap blue shift varies with the dielectric layers and the annealing temperature.The SiO2capping with an InGaAs cladding layer was successfully used to induce larger band tuning effect in the InGaAsP/InP MQWs than the Si3N4capping with an InGaAs cladding layer.On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.
ZHAO Jie, WANG Yong-chen, FENG Zhe-chuan, Ferguson I. Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering[J]. 半导体光子学与技术, 2004, 10(2): 73. ZHAO Jie, WANG Yong-chen, FENG Zhe-chuan, Ferguson I. Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering[J]. Semiconductor Photonics and Technology, 2004, 10(2): 73.