半导体光子学与技术, 2004, 10 (2): 101, 网络出版: 2011-08-15
Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices
Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices
摘要
Abstract
Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45°with the normal of the device surface, resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.
LI Jian-ming, CHONG Ming, XU Jia-dong, HU Chuan-xian, DUAN Xiao-feng, GAO Min, WANG Feng-lian. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices[J]. 半导体光子学与技术, 2004, 10(2): 101. LI Jian-ming, CHONG Ming, XU Jia-dong, HU Chuan-xian, DUAN Xiao-feng, GAO Min, WANG Feng-lian. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices[J]. Semiconductor Photonics and Technology, 2004, 10(2): 101.