半导体光子学与技术, 2004, 10 (2): 101, 网络出版: 2011-08-15  

Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices

Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices
作者单位
1 Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, CHN
2 Institute of Physics,Chinese Academy of Sciences, Beijing 100080, CHN
摘要
Abstract
Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45°with the normal of the device surface, resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.

LI Jian-ming, CHONG Ming, XU Jia-dong, HU Chuan-xian, DUAN Xiao-feng, GAO Min, WANG Feng-lian. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices[J]. 半导体光子学与技术, 2004, 10(2): 101. LI Jian-ming, CHONG Ming, XU Jia-dong, HU Chuan-xian, DUAN Xiao-feng, GAO Min, WANG Feng-lian. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices[J]. Semiconductor Photonics and Technology, 2004, 10(2): 101.

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