半导体光子学与技术, 2004, 10 (3): 208, 网络出版: 2011-08-15  

Thermal Conductivities of III-V Antimonides

Thermal Conductivities of III-V Antimonides
作者单位
State Key Lab. of Function. Mater. for Inform., Shanghai Institute of Microsyst. and Inform. Technol., CASs, Shanghai 200050, CHN
摘要
Abstract
Thermal parameters of various III-V antimonides,especially the quaternary lattice matched to GaSb or InAs substrates as well as some strained ternaries,have been investigated theoretically.Results show that at most composition region many ternary and quaternary antimonides exhibit rather lower thermal conductivity compared to related binaries,and the reason has been discussed.The thermal designing rule of the lasers and other power devices using those antimonides also has been discussed.

ZHU Cheng, ZHANG Yong-gang, LI Ai-zhen. Thermal Conductivities of III-V Antimonides[J]. 半导体光子学与技术, 2004, 10(3): 208. ZHU Cheng, ZHANG Yong-gang, LI Ai-zhen. Thermal Conductivities of III-V Antimonides[J]. Semiconductor Photonics and Technology, 2004, 10(3): 208.

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