半导体光子学与技术, 2004, 10 (4): 252, 网络出版: 2011-08-15
Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films
Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films
摘要
Abstract
Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.
CHENG Xiang, CHEN Chao, CAI Jia-fa, LIU Tie-lin. Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films[J]. 半导体光子学与技术, 2004, 10(4): 252. CHENG Xiang1, CHEN Chao1, CAI Jia-fa1, LIU Tie-lin. Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films[J]. Semiconductor Photonics and Technology, 2004, 10(4): 252.
PDF全文
