半导体光子学与技术, 2004, 10 (4): 265, 网络出版: 2011-08-15
Top Contact Pentacene Organic Thin Film Field Effect Transistors
Top Contact Pentacene Organic Thin Film Field Effect Transistors
摘要
Abstract
Using pentacene as an active material, the organic thin film transistors were fabricated on Si3N4/p-Si substrates by using RF-magnetron sputtered amorphous aluminium as the gate electrode contact, and using highly doped Si as the gate electrode and substrate with plasma-enhanced chemical vapor deposited (PECVD) silicon nitride as gate dielectric. Pentacene thin films were deposited by thermal evaporation on dielectrics as the active layer, then RF-magnetron sputtered amorphous aluminium was used as the source and drain contacts. Measurement results show that field effect mobility and threshold voltage are 0.043 cm2/(V·s) and 12.6 V, respectively, and on-off current ratio is nearly 1×103.
ZHANG Su-mei, SHI Jia-wei, SHI Ying-xue, GUO Shu-xu, LIU Ming-da, MA Dong-ge, CHEN Jiang-shan. Top Contact Pentacene Organic Thin Film Field Effect Transistors[J]. 半导体光子学与技术, 2004, 10(4): 265. ZHANG Su-mei, SHI Jia-wei, SHI Ying-xue, GUO Shu-xu, LIU Ming-da, MA Dong-ge, CHEN Jiang-shan. Top Contact Pentacene Organic Thin Film Field Effect Transistors[J]. Semiconductor Photonics and Technology, 2004, 10(4): 265.