半导体光子学与技术, 2005, 11 (1): 52, 网络出版: 2011-08-18
Theoretical Analysis and Simulation of BJFET Obstructive Characteristics
Theoretical Analysis and Simulation of BJFET Obstructive Characteristics
摘要
Abstract
A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel widthWand channel lengthL. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.
ZENG Yun, YAN Min, YAN Yong-hong, FAN Wei. Theoretical Analysis and Simulation of BJFET Obstructive Characteristics[J]. 半导体光子学与技术, 2005, 11(1): 52. ZENG Yun, YAN Min, YAN Yong-hong, FAN Wei. Theoretical Analysis and Simulation of BJFET Obstructive Characteristics[J]. Semiconductor Photonics and Technology, 2005, 11(1): 52.