半导体光子学与技术, 2005, 11 (3): 188, 网络出版: 2011-08-18  

Effect of Chemical Doping and Ion Implantation on Conductivity of Poly(p-phenylene vinylene) Derivatives

Effect of Chemical Doping and Ion Implantation on Conductivity of Poly(p-phenylene vinylene) Derivatives
作者单位
Institute of Photoelectric Technol. and Solar Energy, School of Electron. and Inform. Eng., Xi’an Jiaotong University, Xi’an 710049, CHN
摘要
Abstract
Abstract:The surface conductivity of poly [-2methoxy252(3’2methyl) butoxy]-p-phenylene vinylene (PMOMBOPV) films doped with FeCl3and H-SO4by chemical method and implanted by N+ions was studied and the comparison of environmental stability of conductive behavior was also investigated. The energy and dose of N+ions were in the rang 15 ~ 35 keV and 3.8×1015~ 9.6×1016ions/cm-, respectively. The conductivity of PMOMBOPV film was enhanced remarkably with the increases of the energy and dose of N+ ions. For example, the conductivity of PMOMBOPV film was 3.2×10-2S/cm when ion implantation was performed with an energy of 35 keV at a dose of 9.6×1016ions/cm2, which was almost seven orders of magnitude higher than that of film unimplanted. The environmental stability of conductive behavior for ion- implanted film was much better than that of chemical doped films. Moreover, the conductive activation energy of ion-implanted films was measured to be about 0.17 eV.

LI Bao-ming, WU Hong-cai, LIU Xiao-zeng, LI Xiao-qi, GAO Chao. Effect of Chemical Doping and Ion Implantation on Conductivity of Poly(p-phenylene vinylene) Derivatives[J]. 半导体光子学与技术, 2005, 11(3): 188. LI Bao-ming, WU Hong-cai, LIU Xiao-zeng, LI Xiao-qi, GAO Chao. Effect of Chemical Doping and Ion Implantation on Conductivity of Poly(p-phenylene vinylene) Derivatives[J]. Semiconductor Photonics and Technology, 2005, 11(3): 188.

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