半导体光子学与技术, 2005, 11 (4): 221, 网络出版: 2011-08-18  

Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE

Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE
作者单位
Dept. of Math. and Phys., Huaihai Institute of Technology, Lianyungang 222005, CHN
摘要
Abstract
Abstract:The growth front evolution of GaN thin films deposited on sapphire substrate by hydride vapor phase epitaxity has been studied with atomic force microscope. The evolution of the surface morphology presents four features of stage with the growth process. In initial growth stage, the surface is granular, and the typical grain diameter is about 250 nm fort=0.1 min. 3D growth plays a key role before the films come up to full coalescence, which causes a rough surface. After 0.1 min the growth dimension decreases with the increase of lateral over growth, the surface roughness obviously decreases. From 0.4 min to 3 min, the growth front roughness increases gradually, and the evolution of the surface roughness exhibits the characteristics of self-affined fractal. Beyond 3 min, the root-mean-square decreases gradually, which means the deposition behavior from hyper22D growth gradually turns into layer growth mode with the increase of growth time.

LU Dian-qing, LI Xin-hua, LIU Xue-dong. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE[J]. 半导体光子学与技术, 2005, 11(4): 221. LU Dian-qing, LI Xin-hua, LIU Xue-dong. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE[J]. Semiconductor Photonics and Technology, 2005, 11(4): 221.

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