Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO-as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900℃was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D- bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.