半导体光子学与技术, 2005, 11 (4): 225, 网络出版: 2011-08-18
Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy
Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy
摘要
Abstract
Photoluminescence spectra were used to characterize the boron-doped Si layers grown by molecular beam epitaxy using HBO-as the doping source. The influence of boron doping concentration on the dislocation-related photoluminescence spectra of molecular beam epitaxy Si layers annealed at 900℃was studied with different doping concentrations and growth temperature. The broad photoluminescence band(from 0.75 eV to 0.90 eV) including D1 and D- bands was associated with high boron doping concentration in the samples, while D3 and D4 bands might be related to oxygen precipitates.
LI Cheng, LAI Hong-kai, CHEN Song-yan. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy[J]. 半导体光子学与技术, 2005, 11(4): 225. LI Cheng, LAI Hong-kai, CHEN Song-yan. Photoluminescence Characterization of Boron-doped Si Layers Grown by Molecular Beam Epitaxy[J]. Semiconductor Photonics and Technology, 2005, 11(4): 225.