半导体光子学与技术, 2005, 11 (4): 239, 网络出版: 2011-08-18  

Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition

Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition
作者单位
Institute of Semiconductor, College of Phys. and Electron., Shandong Normal University, Jipnan 250014, CHN
摘要
Abstract
Abstract:Pulsed laser deposition (PLD) is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared under various deposition conditions by PLD. The effects of various substrate temperature, oxygen partial pressure, annealing temperature, substrate, buffer layers thickness and film thickness on micro2structural, optical and electrical properties of ZnO films grown by PLD technology are reviewed. ZnO films with special function can grow under proper conditions by PLD.

HE Jian-ting, ZHUANG Hui-zhao, XUE Cheng-shan, ZHAO jing, TIAN De-heng, WU Yu-xin, LIU Yi-an, XUE Shou-bin, HU Li-jun. Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition[J]. 半导体光子学与技术, 2005, 11(4): 239. HE Jian-ting, ZHUANG Hui-zhao, XUE Cheng-shan, ZHAO jing, TIAN De-heng, WU Yu-xin, LIU Yi-an, XUE Shou-bin, HU Li-jun. Recent Advances in ZnO Films Prepared by Pulsed Laser Deposition[J]. Semiconductor Photonics and Technology, 2005, 11(4): 239.

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