半导体光子学与技术, 2006, 12 (1): 15, 网络出版: 2011-08-18   

Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates

Solid2phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates
作者单位
Key Laboratory of Material Physics for Ministry of Education, Zhengzhou University, Zhengzhou 450052, CHN
摘要
Abstract
Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by conventional furnace annealing and rapid thermal annealing(RTA), respectively. From the Raman spectra, X- ray diffraction and scanning electron microscope, it is found that the grain size is crystallized at 850℃in both techniques. The thin film made by RTA is smooth and of perfect structure, the thin film annealed by FA has a highly structural disorder. An average grain size of about 30 nm is obtained by both techniques.

JIN Rui-min, LU Jing-xiao, FENG Tuan-hui, YANG Shi-e, ZHANG Li-wei. Solid-phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates[J]. 半导体光子学与技术, 2006, 12(1): 15. JIN Rui-min, LU Jing-xiao, FENG Tuan-hui, YANG Shi-e, ZHANG Li-wei. Solid2phase Crystallization of Hydrogenated Amorphous Silicon on Glass Substrates[J]. Semiconductor Photonics and Technology, 2006, 12(1): 15.

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