半导体光子学与技术, 2007, 13 (1): 63, 网络出版: 2011-08-18  

Novel Scheme of All-optical AND Gate Based on Fabry-Perot Semiconductor Optical Amplifier

Novel Scheme of All-optical AND Gate Based on Fabry-Perot Semiconductor Optical Amplifier
作者单位
Key Laboratory of Broadband Fiber Transmission and Communication Networks, University of Electronic Science and Technology of China, Chengdu 610054, CHN
摘要
Abstract
A novel scheme of all-optical AND gate based on a Fabry-Perot semiconductor optical amplifier (FP-SOA) is proposed and its feasibility is verified by simulation. Using this scheme, all-optical AND gate can be realized with the extinction ratio of 10 dB. The influence of pulse interval and pulse width on the extinction ratio is also investigated.

ZHANG Wei, QIU Kun, LING Yun, PANG Ying. Novel Scheme of All-optical AND Gate Based on Fabry-Perot Semiconductor Optical Amplifier[J]. 半导体光子学与技术, 2007, 13(1): 63. ZHANG Wei, QIU Kun, LING Yun, PANG Ying. Novel Scheme of All-optical AND Gate Based on Fabry-Perot Semiconductor Optical Amplifier[J]. Semiconductor Photonics and Technology, 2007, 13(1): 63.

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