半导体光子学与技术, 2007, 13 (4): 243, 网络出版: 2011-08-18  

Properties of Light Emission Spectrum of Double-barrier Tunnel Junction

Properties of Light Emission Spectrum of Double-barrier Tunnel Junction
作者单位
1 School of Management and Engineering, Nanjing University, 210093 Nanjing, CHN
2 School of Electronic Science and Engineering, Southeast University, 210096 Nanjing, CHN
摘要
Abstract
Fabricated are the double-barrier light emission tunnel junctions successfully. Introduced are the fabrication process and light emission characteristics. The spectra of the junctions are measured and analyzed especially. Their spectrum wavelength including main wave peak(locates at 450 nm~500 nm) of the double-barrier junction shows a“blue shift”in comparison with that of the single-barrier Metal/Insulator/Semiconductor(MIS) or Metal/Insulator/Metal(MIM) junction(wave peak locates at 620 nm~740 nm). This phenomenon should be due to the occurrence of the electron resonant tunneling in the double-barrier junction.

WANG Mao-xiang, NIE Li-cheng, ZHANG You-wen, YU Jian-hua, LIU Ke-lin. Properties of Light Emission Spectrum of Double-barrier Tunnel Junction[J]. 半导体光子学与技术, 2007, 13(4): 243. WANG Mao-xiang, NIE Li-cheng, ZHANG You-wen, YU Jian-hua, LIU Ke-lin. Properties of Light Emission Spectrum of Double-barrier Tunnel Junction[J]. Semiconductor Photonics and Technology, 2007, 13(4): 243.

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