半导体光子学与技术, 2007, 13 (4): 261, 网络出版: 2011-08-18  

Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides

Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides
作者单位
1 Institute of Optoelectronics Science and Engineering and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, CHN
2 Telecommunication Technology Division/CESET, State University of Campinas, Limeira, SP, Brazil
摘要
Abstract
A complete theoretical modeling, avoiding any priori-assumption, is deduced and demonstrated for ultra-fast femtosecond optical pulses in silicon-on-insulator optical waveguides which includes the group velocity dispersion, third-order dispersion, self-phase and cross-phase modulations, self-steepening and shock formation, Raman depletion, propagation loss, two-photon absorption, free-carrier absorption, and free-carrier dispersion. Finally, the temporal and spectral characteristics of 100 fs optical pulses at 1.55μm are numerically observed in 5-mm-long waveguides while considering different initial chirps and incident peak intensity levels.

WU Jian-wei, LUO Feng-guang, Cristiano de Mello Gallep. Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides[J]. 半导体光子学与技术, 2007, 13(4): 261. WU Jian-wei, LUO Feng-guang, Cristiano de Mello Gallep. Propagation of Ultra-fast Femtosecond Pulses in Silicon-on-insulator Optical Waveguides[J]. Semiconductor Photonics and Technology, 2007, 13(4): 261.

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