半导体光子学与技术, 2006, 12 (4): 250, 网络出版: 2011-08-18
Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes
Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes
摘要
Abstract
An organics/metal Schottky diode is fabricated using 3, 4∶9, 10-perylenetetracarboxylic-dianhydride(PTCDA) thin film sandwiched between ITO and Au by simple thermal evaporation technique. The current-voltage(I-V) characteristics are investigated at room temperature in open air. The results show the rectification ratio is in excess of 100. From the capacitance-frequency(C-f) and capacitance-voltage(C-V) measurements, the Schottky barrier height between 0.2~0.3 eV is obtained according to standard Schottky theory.
GUO Wen-ge, ZHANG Yan-cao, ZHANG Shou-gang. Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes[J]. 半导体光子学与技术, 2006, 12(4): 250. GUO Wen-ge, ZHANG Yan-cao, ZHANG Shou-gang. Capacitance-frequency Spectrum Characterization of Organics/Metal Schottky Diodes[J]. Semiconductor Photonics and Technology, 2006, 12(4): 250.