半导体光子学与技术, 2005, 11 (2): 73, 网络出版: 2011-08-19   

Single Photon Detection of InGaAs/InP APD Based on Gated-mode Operation at Telecom Wavelengths

Single Photon Detection of InGaAs/InP APD Based on Gated-mode Operation at Telecom Wavelengths
作者单位
1 School of Inform. and Opto-Electron. Sci. and Eng., South China Normal University, Guangzhou 510631, CHN
2 Dept. of Appl. Phys., South China University of Technology, Guangzhou 510641, CHN
3 Industrial University of Guangdong, Guangzhou 510090, CHN
4 Dept. of Electron. Eg., Jinan University, Guangzhou 510632, CHN
摘要
Abstract
Abstract:Based on the commercially available avalanche photodiodes, the basic needs of gated-mode operation for single photon are discussed. Gated-mode technique based on the experimental data for detection of single photon is analyzed at communication wavelengths so that the basic operation parameters can decide properly for efficient detection of single photon. The bias voltage has related to the punch-through voltage in combining the cooling technique with synchronization to decrease the dark counts.

LIAO Chang-jun, WANG Jin-dong, LI Hua, PENG Xiao-dong, GUO Jian-ping, LI Ri-hao, ZHAO Feng, WEI Zheng-jun, ZHOU Jin-yun, FENG Jin-yuan, LIU Wei-ping, LIU Song-hao. Single Photon Detection of InGaAs/InP APD Based on Gated-mode Operation at Telecom Wavelengths[J]. 半导体光子学与技术, 2005, 11(2): 73. LIAO Chang-jun, WANG Jin-dong, LV Hua, PENG Xiao-dong, GUO Jian-ping, LI Ri-hao, ZHAO Feng, WEI Zheng-jun, ZHOU Jin-yun, FENG Jin-yuan, LIU Wei-ping, LIU Song-hao. Single Photon Detection of InGaAs/InP APD Based on Gated-mode Operation at Telecom Wavelengths[J]. Semiconductor Photonics and Technology, 2005, 11(2): 73.

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