半导体光子学与技术, 2005, 11 (2): 85, 网络出版: 2011-08-19
Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO
Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO
ZnO Schottky barrier junction Characteristic Barrier height Surface state UV photodetector Spectral responsivity
摘要
Abstract
Hexagonal microtube ZnO was firstly grown on single crystal p-Si (111) substrates by hydrothermal method, and fabricated Ag/n-ZnO and Au/n-ZnO Schottky junction. Schottky effective barrier heights were calculated byI-Vmeasurement. It is confirmed that the presence of a large amount of surface states related possibly to lattice imperfections existed near the surface leads to the pinning of the surface Fermi level at 0.35 eV below the conduction-band edge. Then the fabricated Schottky barrier junctions are evaluated for their use as UV photodetectors.
GAO Hui, LI Yan, YANG Li-ping, DENG Hong. Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO[J]. 半导体光子学与技术, 2005, 11(2): 85. GAO Hui, LI Yan, YANG Li-ping, DENG Hong. Characteristics of Schottky Barrier Junction Based on Hexagonal Microtube ZnO[J]. Semiconductor Photonics and Technology, 2005, 11(2): 85.
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