半导体光子学与技术, 2008, 14 (1): 42, 网络出版: 2011-08-19
Synthesis and Photoluminescence of GaN Nanowires with Nb Catalyst
Synthesis and Photoluminescence of GaN Nanowires with Nb Catalyst
摘要
Abstract
Large-scale GaN nanowires are successfully synthesized by ammoniating Ga2O3films on Nb layer deposited on Si(111) substrates at 850℃. X-ray diffraction(XRD), scanning electron microscopy(SEM), field-emssion transmission electron microscope(FETEM), Fourier transformed infrared spectrum(FTIR) are used to characterize the structural and morphological properties of the as-synthesized GaN nanowires. The results reveal that the nanowires are pure hexagonal GaN wurtzite structure with a length of about several microns and a diameter between 50 nm and 100 nm. Finally, discussed briefly is the formation mechanism of gallium nitride nanowires.
ZHUANG Hui-zhao, LI Bao-li, XUE Cheng-shan, ZHANG Shi-ying, WANG De-xiao, SHEN Jia-bing. Synthesis and Photoluminescence of GaN Nanowires with Nb Catalyst[J]. 半导体光子学与技术, 2008, 14(1): 42. ZHUANG Hui-zhao, LI Bao-li, XUE Cheng-shan, ZHANG Shi-ying, WANG De-xiao, SHEN Jia-bing. Synthesis and Photoluminescence of GaN Nanowires with Nb Catalyst[J]. Semiconductor Photonics and Technology, 2008, 14(1): 42.
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