半导体光子学与技术, 2008, 14 (1): 65, 网络出版: 2011-08-19  

Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor

Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor
作者单位
1 School of Physics and Microelectronics Science, Hunan University, Changsha 410082, CHN
2 First Aeronautic College of Air Force, Xinyang 464000, CHN
摘要
Abstract
Presented was an optimum designed CMOS active pixel sensor. In this sensor, used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor. Compared with traditional active pixel sensor under the same condition based on 0.25μm CMOS technology, simulating results show that the new structure device has higher signal-to-noise ratio, wider output swing, wider dynamic range and faster readout speed.

ZENG Yun, HANG Guo-liang, LI Xiao-lei, WANG Tai-hong. Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor[J]. 半导体光子学与技术, 2008, 14(1): 65. ZENG Yun, ZHANG Guo-liang, LI Xiao-lei, WANG Tai-hong. Low Voltage Active Pixel Sensor Based on PMOS Restoration Transistor[J]. Semiconductor Photonics and Technology, 2008, 14(1): 65.

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