半导体光子学与技术, 2008, 14 (4): 224, 网络出版: 2011-08-19
Stress-strain Analysis of p-type GaN Films Material
Stress-strain Analysis of p-type GaN Films Material
摘要
Abstract
The crystal quality of p-GaN film depends on the stress-strain during the process of material growth at a certain extent. A smooth high-quality GaN epitaxial layer was grown on sapphire substrate using standard low-temperature(LT) buffer layer by MOCVD. And by testing analysis of correlative experiments, we found that the stress-strain of p-type GaN could be changed by annealing, enhancing the crystal quality.
LIAO Xiu-ying, ZHU Yan-ling, YANG Xiao-bo, ZHAO Hong, ZHAO Wen-bo, ZHOU Xun, ZOU Ze-ya, ZENG Qing-gao. Stress-strain Analysis of p-type GaN Films Material[J]. 半导体光子学与技术, 2008, 14(4): 224. LIAO Xiu-ying, ZHU Yan-ling, YANG Xiao-bo, ZHAO Hong, ZHAO Wen-bo, ZHOU Xun, ZOU Ze-ya, ZENG Qing-gao. Stress-strain Analysis of p-type GaN Films Material[J]. Semiconductor Photonics and Technology, 2008, 14(4): 224.