半导体光子学与技术, 2009, 15 (2): 117, 网络出版: 2011-08-19
Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing
Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing
摘要
Abstract
Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing(FA) and rapid thermal annealing(RTA), respectively. From the Raman spectra and scanning electronic microscope(SEM), it found that the thin films made by RTA had smooth and perfect structure, while the thin films annealed by FA had a higher degree of structural disorder.
JIN Rui-min, ZHENG Xiao-yan, CHEN Lan-li, LUO Peng-hui, GUO Xin-feng, LU Jing-xiao. Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing[J]. 半导体光子学与技术, 2009, 15(2): 117. JIN Rui-min, ZHENG Xiao-yan, CHEN Lan-li, LUO Peng-hui, GUO Xin-feng, LU Jing-xiao. Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing[J]. Semiconductor Photonics and Technology, 2009, 15(2): 117.
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