半导体光子学与技术, 2009, 15 (3): 139, 网络出版: 2011-08-19  

Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering

Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering
作者单位
1 Institute of Electronic Information, Hangzhou Dianzi University, Hangzhou 310018, CHN
2 State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, CHN
摘要
Abstract
Na-doped p-type ZnO thin films have been realized by DC reactive magnetron sputtering with a set of metal-Zn targets doped with various Na contents and under different substrate temperatures, respectively. Hall effect measurement, field-emission SEM, X-ray diffraction and optical transmission were carried out to investigate the effects of Na content and substrate temperature on the properties of p-type films. Results indicate that all the Na-doped ZnO films are strongly (002) oriented, and have an average transmittance ~85% in the visible region. Na-doped p-type ZnO films with good structural, electrical, and optical properties can only be obtained at an intermediate amount of Na content and under appropriate substrate temperature. At the optimal condition, the Na-doped p-type ZnO has the lowest resistivity of 13.8Ω·cm with the carrier concentration as high as 1.07×1018cm-3. The stability of the Na-doped p-type ZnO is also studied in this paper and it is found that the electrical properties keep stable in a period of one month.

JI Zhen-guo, LIU Fang, HE Hai-yan, HAN Wei-zhi. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering[J]. 半导体光子学与技术, 2009, 15(3): 139. JI Zhen-guo, LIU Fang, HE Hai-yan, HAN Wei-zhi. Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering[J]. Semiconductor Photonics and Technology, 2009, 15(3): 139.

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