半导体光子学与技术, 2010, 16 (1): 35, 网络出版: 2011-08-19   

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering
作者单位
College of Materials Science & Engineering, Sichuan University, Chengdu 610064, CHN
摘要
Abstract
In2O3∶SnO2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In2O3/SnO2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV- Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.

ZHANG Xing, ZHANG Jingquan, WANG Bo, WANG Shenghao, FENG Lianghuan, CAI Yaping, WU Lili, LI Wei, LEI Zhi, LI Bing, ZENG Guanggen. Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering[J]. 半导体光子学与技术, 2010, 16(1): 35. ZHANG Xing, ZHANG Jingquan, WANG Bo, WANG Shenghao, FENG Lianghuan, CAI Yaping, WU Lili, LI Wei, LEI Zhi, LI Bing, ZENG Guanggen. Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering[J]. Semiconductor Photonics and Technology, 2010, 16(1): 35.

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