半导体光子学与技术, 2010, 16 (2-3): 83, 网络出版: 2011-08-19
Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology
Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology
摘要
Abstract
The wedge-shaped and leaf-type silicon light-emitting devices(LED) are designed and fabricated with the Singapore Chartered Semi Inc. s dual-gate standard 0.35μm CMOS process. The basic structure of the two devices is N well-P+junction. P+area is the wedge-shaped structure, which is embedded in N well. The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices. The main difference between the two devices is their different electrode distribution, which is mainly in order to analyze the application of electric field confinement(EFC). The devices micrographs were measured with the Olympus IC test microscope. The forward and reverse bias electrical characteristics of the devices were tested. Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.
YANG Guanghua, WANG Wei. Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology[J]. 半导体光子学与技术, 2010, 16(2-3): 83. YANG Guanghua, WANG Wei. Research on Electric Field Confinement Effect in Silicon LED Fabricated by Standard CMOS Technology[J]. Semiconductor Photonics and Technology, 2010, 16(2-3): 83.
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