发光学报, 2011, 32 (8): 825, 网络出版: 2011-08-29
退火处理对W∶Bi4Ge3O12和Bi12GeO20晶体发光性能的影响
Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi4Ge3O12and Bi12GeO20 Crystals
摘要
通过提拉法制备了W∶Bi4Ge3O12和Bi12GeO20晶体, 测试了晶体的吸收光谱、光致发光谱和发光衰减时间等。W∶Bi4Ge3O12的可见光发光强度比纯Bi4Ge3O12有所增强, 而且N2中退火处理对W∶Bi4Ge3O12发光有进一步增强作用。Bi12GeO20 在N2中退火处理后在745 nm附近有发光峰, 其衰减时间为10 μs左右。两种晶体退火处理后发光均增强, 认为是低价Bi离子发光所致。
Abstract
W∶Bi4Ge3O12 and Bi12GeO20 crystals were prepared by Czochralski(Cz) method. The absorption, photoluminescence (PL) and PL lifetime spectra were investigated. The results revealed the PL intensity of W∶Bi4Ge3O12 was stronger than that of Bi12GeO20, and annealing in N2 can increase the PL intensity of W∶Bi4Ge3O12. Near infrared PL (at about 745 nm) was observed in Bi12GeO20 annealed in N2, and the lifetime was about 10 μs. The mechanisms of luminescence in W∶Bi4Ge3O12 and annealed Bi12GeO20 was discussed.
俞平胜, 苏良碧, 唐慧丽, 郭鑫, 赵衡煜, 杨秋红, 徐军. 退火处理对W∶Bi4Ge3O12和Bi12GeO20晶体发光性能的影响[J]. 发光学报, 2011, 32(8): 825. YU Ping-sheng, SU Liang-bi, TANG Hui-li, GUO Xin, ZHAO Heng-yu, YANG Qiu-hong, XU Jun. Effects of Annealing Treatment on the Photoluminescence Properties of W∶Bi4Ge3O12and Bi12GeO20 Crystals[J]. Chinese Journal of Luminescence, 2011, 32(8): 825.
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