以乙醇钽[Ta(OC2H5)5]和水蒸气为前驱体，采用原子层沉积（ALD）方法分别在基板温度为250 ℃和300 ℃的K9和石英衬底上制备了Ta2O5光学薄膜。采用分光光度计、X射线光电子能谱（XPS）、X射线衍射（XRD）、扫描电子显微镜（SEM）和原子力显微镜（AFM）等手段对薄膜的光学特性、微结构和表面形貌进行了研究。结果表明，用ALD方法制备的Ta2O5薄膜在刚沉积和350 ℃退火后均为无定形结构，而250 ℃温度下沉积的薄膜其表面粗糙度低，聚集密度很高，光学均匀性优，在中紫外到近红外均表现出很好的光学特性，可以作为高折射率材料很好地应用于光学薄膜中。

Tantalum ethoxide [Ta(OC2H5)5] and water vapor (H2O) are used as chemical precursors to deposit Ta2O5 thin films on K9 and JGS1 substrates by atomic layer deposition (ALD) at the temperature of 250 ℃ and 300 ℃ respectively. Characteristics of the films such as optical properties, microstructure and surface morphological image are investigated by spectrophotometer, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM) and atomic force microscopy (AFM). The results show that both the as-deposited and annealed Ta2O5 films are amorphous. The film deposited at the temperature of 250 ℃ possesses excellent microstructure with good optical properties in the spectral region from mid-ultraviolet to near-infrared, and it can be well used for optical coatings as a kind of high-refractive-index materials.