提出了一种对BCCD(埋沟电荷耦合器件)沟道电势的直流测试方法, 并对此进行了理论分析和实验研究, 该方法能快速、准确地进行BCCD沟道电势测试, 确定BCCD随栅压变化的沟道电势曲线。实验结果表明, 选取宽长比为11/5的NMOS管、源电流为0.01μA的测试条件, 能够很好地模拟BCCD的工作状态。通过对 1024×1024可见光BCCD进行验证测试, 证实该方法可靠。

DC testing methods on the channel potential of BCCD (buried channel charge coupled device) are analyzed theoretically and tested experimentally. This method can test the channel potential of BCCD quickly and accurately, so as to determine the channel potential curve with the gate voltage. Experimental results show that choosing NMOS with the ratio of width to length as 11 / 5 and the source current of 0.01μA can simulate the working conditions of BCCD perfectly. Tests on 1024 × 1024 visible BCCD confirm the reliability of this method.