分析了电流爬升阶段等离子体密度和电流爬升率对逃逸电子行为的影响，研究了低杂波辅助电流驱动条件下的逃逸电子辐射行为。结果发现：电流爬升阶段等离子体密度的大小严重影响了电流爬升阶段甚至电流平顶阶段逃逸电子的行为，较低的等离子体密度将会导致放电过程中比较强的逃逸电子辐射；低能逃逸电子辐射随着电流爬升率的增大而增强；低杂波辅助电流爬升可以有效地节约装置的伏秒数；降低放电过程中的环电压，可有效抑制逃逸电子的产生。

Effects of plasma density and current ramp up rate on runaway electrons is investigated in current ramp-up phase. It is found that higher density and lower current ramp-up rate can reduce generation of runaway electrons in current ramp-up phase, even in current flat-top phase. Low plasma density will result in hard runaway electrons emission. Lower hybrid wave (LHW) can drive plasma current in order to reduce loop voltage and save volt-second product of Tokamak in current ramp-up phase. Runaway electrons can also be restrained because of reduced loop voltage.