采用Pechini 溶胶-凝胶法结合旋涂工艺在单晶硅(111)上制备了Ce3+离子掺杂的硅酸镥(Lu2SiO5) 薄膜，利用热重差热分析(TG-DSC)、X射线衍射(XRD)、扫描电镜(SEM)、真空紫外光谱(VUV) 及椭偏(SE) 测试对Ce∶Lu2SiO5 薄膜的物相、形貌、发光性质和光学常数进行了表征。结果表明: 薄膜样品从900 ℃开始晶化，1 100 ℃时晶化完全。薄膜表面均匀、平整、无裂纹。真空紫外激发光谱中存在较强的基质发射，发射光谱是一个350～500 nm 的宽带谱，宽带中心在400 nm左右。折射率、消光系数分别为1.82～1.94和0.005～0.05，厚度与SEM测试结果相一致。

Ce3+-doped lutetium oxyorthosilicate (Ce∶Lu2SiO5) films have been fabricated on silicon (111) substrates by Pechini sol-gel method combined with the spin-coating technique. Thermogravimetry-differential scanning calorimetry (TG-DSC) analysis, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), PL (Photoluminescent) measurements under VUV as well as spectroscopic ellipsometry (SE) were used to characterize the resulting films. The results indicate that the Ce∶Lu2SiO5 films begin to crystallize at 900 ℃ and are completely crystallized at 1 100 ℃. The phosphor films are uniform, dense and crack-free. The VUV spectra show that the excitation is mainly host excited and the emission spectrum is a broad band centered at about 400 nm. The refractive index, the extinction of coefficient are 1.82～1.94 and 0.005～0.05, respectively, the thickness measured by spectroscopic ellipsometry is similar to that obtained by SEM.