量子电子学报, 2011, 28 (5): 551, 网络出版: 2011-09-27
Nd:GdNbO4的制备、结构与发光
Preparation, structure and luminescence of Nd:GdNbO4
摘要
用高温固相法合成了 Nd3 + :GdNbO4 多晶,确定了它的结构, 研究了它的光致发光。Nd3 + :GdNbO4 是单斜结构,空间群为I2/a。采用内标法,测定了(1 at%) Nd:GdNbO4 的晶格参数。用Rietveld精修方法给出了 Nd3 + :GdNbO4 的原子坐标。 在808 nm光激发下,观察到925 nm、1065 nm、1345 nm三个发射带,分别来自于 Nd3 + 的 、4I11/2 、4I13/2 跃迁,以1065 nm处 的发射谱带强度最强。 分析表明 Nd3 + 在 GdNbO4 有很强的晶场作用,是一种潜在的新型激光材料。
Abstract
The polycrystalline Nd3 + :GdNbO4 was synthesized by high temperature solid-state reaction method, its structure was determined and its luminescence was studied. Nd3 + :GdNbO4 is monoclinic with the space group I2/a. The lattice parameters of (1 at%) Nd:GdNbO4 was determined by an internal standard method. The atom coordinates of Nd3 + :GdNbO4 were obtained by Rietveld refinement. Three emission bands of 925 nm, 1065 nm and 1345 nm under 808 nm light excitation were observed, which are from the transitions of Nd3 + ion, respectively. The strongest emission peaks at 1065 nm from the transition of Nd3 + . The study indicates that Nd3 + in GdNbO4 has strong crystal field interaction, and it is a potential laser material.
谭晓靓, 蒋庆辉, 张庆礼, 宁凯杰, 周文龙, 殷绍唐. Nd:GdNbO4的制备、结构与发光[J]. 量子电子学报, 2011, 28(5): 551. TAN Xiao-liang, JIANG Qing-hui, ZHANG Qing-li, NING Kai-jie, ZHOU Wen-long, YIN Shao-tang. Preparation, structure and luminescence of Nd:GdNbO4[J]. Chinese Journal of Quantum Electronics, 2011, 28(5): 551.