采用射频磁控溅射，通过传统的紫外曝光和湿法腐蚀的方法，制备了不同电极间距的金属半导体金属(MSM)结构Mg0.2Zn0.8O可见盲光电探测器。研究了器件的暗电流和响应度随电极间距的变化关系，当施加的电压没有达到贯穿电压的时候，暗电流和响应度均随着电极间距的增加而减小，并对其具体的机制进行了研究。

The metal-semiconductor-metal (MSM) structured Mg0.2Zn0.8O photodetectors with different electrode spacings are made by radio frequency magnetron sputtering, conventional ultraviolet exposure and wet etching methods. The relationship between electrode spacing and dark current or responsivity is studied. Before achieving the punch-through voltage, the dark current and responsivity both decrease with the electrode spacing increasing. Furthermore, the specific mechanisms are also investigated.