红外与毫米波学报, 2011, 30 (5): 406, 网络出版: 2011-10-13
InAs/GaSb超晶格中波焦平面材料的分子束外延技术
Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy
摘要
报道了InAs/GaSb超晶格中波材料的分子束外延生长技术研究.通过改变GaSb衬底上分子束外延InAs/GaSb超晶格材料的衬底温度，以及界面的优化等，改善超晶格材料的表面形貌和晶格失配，获得了晶格失配Δa/a=1.5×10-4，原子级平整表面的InAs/GaSb超晶格材料，材料77 K截止波长为4.87 μm.
Abstract
The growth of mid-wavelength infrared InAs/GaSb superlattice on GaSb substrates by molecular beam epitaxy (MBE)was studied. We optimized the substrate temperature and interface structures to obtain high quality material. The InAs/GaSb superlattice layers were characterized by Atomic Force Microscope(AFM), high resolution X-ray diffraction (XRD) and Fourier Transform Infrared Spectrum. We found the optimal substrate temperature for GaSb and superlattice is 485℃ and 450℃ respectively. We finally obtained highly lattice matched InAs/GaSb materials with 50% cut-off wavelength at 4.84 μm at 77 K.
徐庆庆, 陈建新, 周易, 李天兴, 吕翔, 何力. InAs/GaSb超晶格中波焦平面材料的分子束外延技术[J]. 红外与毫米波学报, 2011, 30(5): 406. XU Qing-Qing, CHEN Jian-Xin, ZHOU Yi, LI Tian-Xing, LV Xiang, HE Li. Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves, 2011, 30(5): 406.
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