利用GaAs夹层掺杂的新方法, 采用金属有机化学气相沉积(MOVCD)技术, 通过控制生长温度, 在蓝宝石衬底上成功制备出As掺杂的p型ZnMgO薄膜。利用X射线衍射分析(XRD)、霍尔效应测试和光致发光(PL)谱等表征方法对薄膜的晶体结构、电学性能和光学特性进行分析。结果表明: 高温生长的ZnMgO薄膜具有良好的c轴取向性; 480~520 ℃时所制备的ZnMgO薄膜为p型导电, 500 ℃时所制备的样品电阻率最低, 为26.33 Ω·cm, 空穴浓度达1.638×1017 cm-3, 迁移率为1.45 cm2/(V·s); 室温PL谱显示, 制得的p型ZnMgO薄膜具有较大的紫外与可见发光峰强度比, 表明其具有良好的光学性能。

By introducing the GaAs interlayer and controling growth temperature, the p-type ZnMgO films were grown on (0001) Al2O3 substrates by metal organic chemical vapor deposition (MOCVD) method. The X-ray diffraction results indicated that the ZnMgO films showed c-axis preferential orientation at temperature of 440~520 ℃. A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 480 to 520 ℃. The lowest resistivity was 26.33 Ω·cm, with a carrier concentration of 1.638×1017 cm-3, and a hall mobility of 1.45 cm2/(V·s). The room temperature photoluminescence (PL) spectrum displayed all the p-type ZnMgO films showed good optical qualities, with a big ratio of near band emission (NBE) to deep level emission (DLE).