光学技术, 2011, 37 (5): 521, 网络出版: 2011-10-21
基于不同衬底材料高出光效率LED芯片研究进展
Progress on LED chips of different substrate with high light extraction efficiency
发光学 出光效率 衬底图案化 衬底转移 垂直结构 luminescence LED LEDs light extraction efficiency patterned substrate substrate removal vertical structure
摘要
提高LED芯片的出光效率是解决LED光源大功率化和可靠性的根本。根据LED芯片所用衬底材料的不同, 总结了近年来提高GaN基LED出光效率的研究进展, 介绍了新的设计思路、工艺结构与制备方法。并从材料结构和衬底选取方面, 对LED芯片未来的发展趋势进行了展望。
Abstract
Enhancement of the light extraction efficiency of light-emitting diodes(LEDs) is the basic way to realize high-power and reliable LEDs. The progress on improvement of the light extraction efficiency of GaN-based LEDs is summarized. New LED chip design concept, craft structure and fabrication methods are introduced according to different substrate materials. The development trends of LED chips are also predicted on view of material structure and substrate.
杜晓晴, 钟广明, 董向坤, 田健, 王晓兰. 基于不同衬底材料高出光效率LED芯片研究进展[J]. 光学技术, 2011, 37(5): 521. DU Xiaoqing, ZHONG Guangming, DONG Xiangkun, TIAN Jian, WANG Xiaolan. Progress on LED chips of different substrate with high light extraction efficiency[J]. Optical Technique, 2011, 37(5): 521.
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