采用体光栅对商用线阵半导体激光器进行线宽压缩，得到线宽0.1 nm、中心波长780.2 nm、最高连续输出功率80 W的泵浦激光输出。为了降低热效应，通过外加斩波器将泵浦光转化为脉冲模式，脉宽440 μs，占空比为1∶5。采用长度为5 mm的铷金属饱和蒸气作为增益介质，并在常温下充入33 kPa乙烷和47 kPa氦气，进行了出光实验。在泵浦峰值功率35.4 W，铷吸收池温度120 ℃时，得到峰值功率600 mW的795 nm铷激光输出，斜率效率为1.7%。

By incorporating a commercial diodelaserbar into a volume Bragg grating(VBG) based external cavity, we obtained 80 W CW output power with 0.1 nm linewidth centered at 780.2 nm. To reduce the thermal effect, a chopper was used to convert the CW pump light into pulsed mode, with pulse duration of 440 μs and duty ratio of 1∶5. The 5 mm long gain medium was filled with metallic Rb and buffer gases of 33 kPa ethane and 47 kPa helium at room temperature. At peak pump power of 35.4 W and gain medium temperature of 120 ℃, we obtained 600 mW peak power output of the 795 nm Rb laser with slope efficiency of 1.7%.