用超声喷雾热解法制备SnS多晶薄膜, 对比了三种不同前驱液配比浓度对SnS薄膜性能的影响。 XRD测试表明, 当前驱液为硫脲(0.5 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时, SnO2的衍射峰强度比较大; 当前驱液为硫脲(0.6 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时, SnS的衍射峰占主要地位, 其中也含有一定量的SnO2; 当前驱液为硫脲(0.7 mol·L-1)+四氯化锡(0.5 mol·L-1)+去离子水时, 退火后的薄膜为单一的SnS薄膜, 具有斜方晶系结构。 SEM观测发现, 薄膜均匀、 致密, 前驱液中硫脲浓度较大时, 颗粒也较大。 透过谱测试表明, 浓度对薄膜透过率影响较小。 结合器件的暗I-V和C-V测试, 用三种前驱液配比浓度所制备的器件的结特性差异不大; 当前驱液中硫脲浓度较大时, 载流子浓度相对较大。

In the present paper, SnS thin films were deposited by ultrasonic spray pyrolysis method. The influence of the three different precursor concentrations on the properties of SnS thin films was compared. XRD shows that when precursor solution is thiourea (0.5 mol·L-1) + tin tetrachloride (0.5 mol·L-1)+deionized water, there are SnS and SnO2 mixed phases; when precursor solution is thiourea (0.6 mol·L-1)+tin tetrachloride (0.5 mol·L-1)+deionized water, SnS phase is the dominant diffraction peak, although a certain amount of SnO2 phase is contained; when precursor solution is thiourea (0.7 mol·L-1)+tin tetrachloride (0.5 mol·L-1)+deionized water, thin film after being annealed is single SnS thin film with orthorhombic structure. SEM shows that films are uniform and dense. Furthermore, the particles of films are bigger when thiourea concentration is higher. Transmittance spectrum shows that the influence of precursor concentration on transmittance of thin films is less. Dark I-V and C-V tests of the devices show that junction characteristics of the devices were similar when prepared by three different concentrations of precursor solution, and as the thiourea concentration is higher, the carrier concentration is relatively larger.