主要提出了一种利用SU-8光刻胶形成高深宽比结构的新型压力传感器。为了解决传统压力传感器测量范围受限的问题，通过特定的结构设计，实现敏感膜形变量与法布里珀罗(F-P)腔长变化量的分离且相关的关系。该传感器基于F-P干涉原理和相位解调理论测量压力。通过仿真逐一确定了结构参数，在半径为1500 μm，厚度为100 μm的硅圆膜上，利用SU-8光刻胶形成一个边长100 μm，高400 μm的位移柱作为压力传感器的主要感应部件，通过敏感膜受力形变带动位移柱倾斜，以此改变F-P腔的腔长。结构模型的灵敏度通过仿真测得为2.606 μm/MPa。以此为指导进行了基本的工艺实验，明确了主要的工艺步骤。

A novel pressure sensor based on a high-aspect-ratio structure formed by SU-8 photoresist is proposed. The advantage of the structure lies mainly in the design of separation of sensing membrane deformation with the length change of Fabry-Perot (F-P) cavity, which restricts the linear measurement in most traditional pressure sensors. The sensor is based on F-P interferometer and phase demodulation method. The structural parameters have been ascertained, which will be dealt with during sensor fabrication through numerical simulation. The main sensing elements of the designed model include a silicon membrane and a square column on it. The membrane is with diaphragm thickness of 100 μm and radius of 1500 μm. Meanwhile, the square column is with the dimension of 100 μm×100 μm×400 μm. The sensitivity of the structure model is presented as 2.606 μm/MPa from simulation. Under the guidance of the simulations, the fundamental processing is defined.