研究了硅NPN双极型晶体管(C2060)的中子和电子辐照效应。实验结果显示:经中子和电子辐照后，晶体管扩散电容出现退化，甚至出现负电容(NC)现象；电子辐照后晶体管势垒电容出现明显退化，而中子辐照后并无此现象。对中子和电子辐照后晶体管的退化机理进行了分析，认为：晶体管经中子和电子辐照后产生的缺陷团是产生NC现象的根本原因；中子和电子辐照后产生的缺陷团在晶体管内表现为复合中心，这些复合中心大大降低了少数载流子的数密度和寿命，从而使晶体管扩散电容出现严重退化，甚至出现NC现象；电子辐照产生的点缺陷使晶体管多子数密度降低，从而使势垒电容增大。

The effects of neutron irradiation and electron irradiation on Si NPN-BJT (bipolar junction transistor) were investigated. After neutron irradiation and electron irradiation, the diffusion capacitance of transistor degraded, and even the negative capacitance(NC) phenomenon occurred. After electron irradiation, the barrier capacitance of transistor degraded, but it did not after neutron irradiation. A detailed analysis was made on the degradation mechanism of the junction capacitance after neutron irradiation and electron irradiation. The results indicate that, the defect is the cause of degradation. The defect clusters in transistor induced by both irradiations show as recombination centers, which greatly reduce the concentration and lifetime of minority carriers, giving rise to a serious degradation of transistor diffusion capacitance, and even NC phenomenon. The point defects generated by electron irradiation reduce the concentration of majority carriers, so that the barrier capacitance increases.