完善了由缺陷吸收引起温升导致材料破坏的激光损伤模型。从热传导方程入手，该模型在单杂质缺陷模型基础上，利用米氏散射理论计算杂质缺陷的吸收截面，根据材料基质和杂质缺陷的热物性能参数，计算了杂质相互之间的有效作用距离，即材料的热扩散长度范围。结果表明，考虑周围杂质的影响，基质材料损伤阈值更接近实际情况，同时基质表面的损伤阈值与实验上所得的时间标尺F∝t0.5非常吻合。

An improved laser induced damage (LID) model of absorbing defects causing temperature rise in material is given. Starting with the equation of heat conduction and based on the single-defect LID model, this model gives the absorption cross section of inclusions by Mie theory. The effective interaction distance of defects in the substrate, namely the thermal diffusion length of substrate which is determined by the thermal proerties of substrate material and inclusions, is calculated. The result shows that, considering the influence of inclusions in the substrate, the obtained LID threshold (LIDT) is closer to the result of experiment than single-defect model. Meanwhile, the result of surface LIDT is very consistent with the experimental time scale of F∝t0.5.