激光与光电子学进展, 2012, 49 (2): 022301, 网络出版: 2011-11-28
高速高效光电探测器的制备、测试及特性分析
Fabrication and Characterization of High-Speed and High-Efficiency Photodetector
摘要
报道了一种垂直入射的InP基InGaAs pin光电探测器,介绍了它的制备和测试方法并对器件所展示出的高效,高速,高线性度特性进行了分析。器件的暗电流密度在0和-5 V偏压时分别为1.37×10-5A/cm2和93×10-5 A/cm2;在1.55 μm波长,-3 V偏压下,器件的线性光响应高达28 mW,相应的最大线性电流为17 mA,响应度达到0.61 A/W(无减反射膜);在-5 V偏压下,器件获得高达17.5 GHz的3 dB带宽。
Abstract
In this paper, we demonstrate a top-illuminated InGaAs pin photodetector grown on InP substrate. The fabrication, measurement and characterization of this photodetector are discussed in this paper. Low dark current densities of 1.37×10-5 A/cm2 at 0 and 93×10-5 A/cm2 at a reverse bias of 5 V are achieved. At a wavelength of 1.55 μm, the photodetectors have a responsivity of 0.61 A/W without antireflection coating, a linear photoresponse up to 28 mW optical power and a maximum linear photocurrent of 17 mA at -3 V. The measured 3 dB bandwidth of a 22 μm-diameter photodetector is 17.5 GHz.
刘少卿, 韩勤, 杨晓红, 刘宇, 王杰, 王秀平. 高速高效光电探测器的制备、测试及特性分析[J]. 激光与光电子学进展, 2012, 49(2): 022301. Liu Shaoqing, Han Qin, Yang Xiaohong, Liu Yu, Wang Jie, Wang Xiuping. Fabrication and Characterization of High-Speed and High-Efficiency Photodetector[J]. Laser & Optoelectronics Progress, 2012, 49(2): 022301.