本文提出了一个用来解释真空中绝缘体自发抑制闪络现象的模型, 从而使以前被忽略的由纳秒脉冲电压引起的自发磁场被加以考虑, 并被用来解释真空中绝缘体的闪络电压随脉冲持续时间的变化而发生变化的现象。本文列举了若干组真空绝缘体闪络的实验数据, 并将其与应用模型计算得出的理论值进行比较, 进而详细分析了理论值与实验值的差距。这个模型得出的结论可以用于提高光电导半导体开关(PCSS)的闪络电压, 这将对高压设备的发展起到重要作用。

A model toward explaining the self-initiated resistance to flashover of insulators in vacuum is proposed, thus the previously underestimated effect of self-initiated magnetic field generated by nanosecond pulsed voltage is taken into account to satisfy the experimental data of flashover voltage of insulators in vacuum, which changes with the variation of pulses' risetime. The data of several experiments is illustrated to be compared with the theoretical calculation of this model, and the differences between the theoretical estimation and the experimental results are expounded. The outcomes of this model can be used to improve the flashover voltage of Photoconductive Semiconductor Switches(PCSSs), which is highlighted in the future development of pulse power equipments.