半导体光电, 2011, 32 (1): 1, 网络出版: 2012-01-04
Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展
Device Applications and MBE Growth of Ⅱ-Ⅵ Cd-based Compound Materials
Ⅱ-Ⅵ族镉化物 分子束外延 太阳电池 X射线探测器 红外焦平面阵列 Ⅱ-Ⅵ Cd-based compounds molecular beam epitaxy solar cell X-ray detector infrared focal plane arrays
摘要
Ⅱ-Ⅵ族镉(Cd)化物，如CdTe、CdSe、CdSeTe等具有直接带隙、光学吸收系数高和电学特性优异等突出特点，在太阳电池、X及γ射线探测器、红外焦平面阵列(FPA)等方面均得到了广泛应用。文章简要综述了近年来用分子束外延(MBE)工艺生长镉化物微结构材料的研究进展和器件应用动态，并对镉化物在光电子领域中的发展前景进行了展望。
Abstract
Ⅱ-Ⅵ Cd-based compounds with the characteristics of direct band gap, high optical absorption coefficient, and excellent electrical properties, have been extensively used in solar cells, X- and γ-ray detectors, infrared focal plane arrays (FPAs), etc. In this paper, progresses in molecular-beam-epitaxy (MBE) growth and device applications of Cd-based compounds are briefly reviewed. And their prospects in the field of optoelectronics are also predicted.
赵杰, 刘超, 李彦波, 曾一平. Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展[J]. 半导体光电, 2011, 32(1): 1. ZHAO Jie, LIU Chao, LI Yanbo, ZENG Yiping. Device Applications and MBE Growth of Ⅱ-Ⅵ Cd-based Compound Materials[J]. Semiconductor Optoelectronics, 2011, 32(1): 1.
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