半导体光电, 2011, 32 (1): 74, 网络出版: 2012-01-04
总剂量辐照SiO2/6H-SiC引起的界面势垒变化
Total Dose Radiation Induced Interface Barriers Changing of SiO2/6H-SiC Structure
摘要
辐照会引起MOS器件电介质氧化物与半导体界面势垒变化，影响其工作性能和可靠性。测量了n型6H-SiC MOS电容辐照105rad(Si)剂量前后的I-V曲线，通过Fowler-Nordheim(F-N)隧道电流拟合，得到了界面势垒的大小，辐照前的为2.596eV，辐照后降为1.492eV。界面势垒变化主要是由辐照产生的界面态引起的。
Abstract
The barrier between oxide and SiC interface would change due to irradiation. And operating characteristics would be affected. I-V curves of n-type 6H-SiC MOS capacitor before and after 105rad(Si) irradiation are measured. Interface barriers are calculated by Fowler-Nordheim tunneling fit. The barrier before irradiation is 2.446eV, and that is 1.604eV after irradiation. Shift of barrier is main due to acceptor type interface states produced by irradiation.
牟维兵, 龚敏, 曹群. 总剂量辐照SiO2/6H-SiC引起的界面势垒变化[J]. 半导体光电, 2011, 32(1): 74. MU Weibing, GONG Min, CHAO Qun. Total Dose Radiation Induced Interface Barriers Changing of SiO2/6H-SiC Structure[J]. Semiconductor Optoelectronics, 2011, 32(1): 74.
PDF全文
