半导体光电, 2011, 32 (2): 165, 网络出版: 2012-01-04
薄p型层GaN基p-i-n型紫外探测器的反向漏电特性
Study on Leakage Current of Thin player GaN p-i-n Ultraviolet Detector
紫外探测器 优质因子 反向漏电 GaN GaN p-i-n pin ultraviolet photodiode zerobiased resistance area product leakage current
摘要
制备了薄p型层GaN基pin型紫外探测器，并对其反向漏电特性进行了研究。探测器材料采用金属有机化学气相沉积(MOCVD)方法在蓝宝石衬底上外延生长获得，pGaN的厚度为30nm。基于该材料制作了具有共面电极的探测器器件，并采用SiO2对刻蚀侧壁进行了钝化。测试结果表明，结面积为1.825×10-4cm2的器件在-1V时的反向漏电流面密度为3.0×10-9A/cm2，优质因子达到3.7×109Ω·cm2。
Abstract
GaNbased pin ultraviolet photodiode with a thin pGaN layer has been fabricated, and its leakage current is investigated. The photodiode is epitaxially grown on sapphire substrate by metal organic vapor phase deposition(MOVPE), and its pGaN thickness is 30nm. The mesa surface treated by inductively coupled plasma(ICP) etching is passivated with SiO2 film. The detector with a junction area of 1.825×10-4cm2 has a leakage current density of 3.0×10-9A/cm2 at -1V and a zerobiased resistance area product of 3.7×109Ω·cm2.
邹翔, 汪莱, 裴晓将, 赵维, 王嘉星, 罗毅. 薄p型层GaN基p-i-n型紫外探测器的反向漏电特性[J]. 半导体光电, 2011, 32(2): 165. ZOU Xiang, WANG Lai, PEI Xiaojiang, ZHAO Wei, WANG Jiaxing, LUO Yi. Study on Leakage Current of Thin player GaN p-i-n Ultraviolet Detector[J]. Semiconductor Optoelectronics, 2011, 32(2): 165.
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