半导体光电, 2011, 32 (2): 195, 网络出版: 2012-01-04
激光二极管的位移损伤效应研究
Study on Displacement Damage Effects of Laser Diodes
激光二极管 位移损伤 阈值电流 外微分量子效率 IV特性 laser diode displacement damage threshold current external differential quantum efficiency IV characteristics
摘要
以解析公式的推导、位移损伤实验结果以及位移效应的数值模拟结果为基础,分析了位移效应产生的缺陷作为非辐射复合中心和多数载流子陷阱两种情形下的激光二极管阈值电流、外微分量子效率及IV特性随辐照注量的变化规律。通常的实验注量范围内,缺陷主要作为非辐射复合中心,导致激光二极管阈值电流随注量呈线性增大,但外微分量子效率基本不变,IV特性低压区电流增大;当辐照注量较高,引起明显的多数载流子去除效应时,阈值电流随注量的增大不再呈线性关系,同时外微分量子效率下降,IV特性高压区的电流减小。
Abstract
Based on the derivation of analytical formula, displacement damage test results and numerical simulation of displacement effects, the fluence dependences of threshold current, external differential quantum efficiency and IV characteristics are analyzed in either case of defects as the nonradiative recombination centers and defects as the traps for majority carriers. The defects primarily act as nonradiative recombination centers in ordinary range of test fluence and induce the following results that the threshold current linearly increases with fluence, current at the low voltage area of IV characteristics increases with fluence, however, the external differential quantum efficiency has little change. When the test fluence is high enough to induce evident majority carrier removal, the increase of the threshold current with fluence is no longer linear, meanwhile, the external differential quantum efficiency and the current at high voltage of IV characteristics will decrease with fluence.
黄绍艳, 刘敏波, 肖志刚, 唐本奇, 王祖军, 张勇. 激光二极管的位移损伤效应研究[J]. 半导体光电, 2011, 32(2): 195. 黄绍艳, 刘敏波, 肖志刚, 唐本奇, 王祖军, 张勇. Study on Displacement Damage Effects of Laser Diodes[J]. Semiconductor Optoelectronics, 2011, 32(2): 195.