半导体光电, 2011, 32 (2): 220, 网络出版: 2012-01-04
几何横向比例对金属孔阵列强透射特性的影响
Effect of Horizontal Proportion of Geometry on Extraordinary Transmission Characteristics of Metal Hole Array
表面光学 几何横向比例 平面波展开法 金属/电介质光子晶体 强透射特性 optics at surfaces horizontal proportion of geometry size plane wave expansion method metal/dielectric photonic crystal extraordinary transmission characteristics
摘要
设计了三种不同的几何横向比例(孔直径与晶格间距的比值)来研究其对金/二氧化硅/硅圆孔阵列组成的光子晶体强透射特性的影响。采用平面波展开法模拟了在三个不同的几何横向比例(0.4;0.5;0.6)条件下硅光子晶体的光子带隙。理论模拟结果发现比例为0.5、由正三角形晶格组成的硅光子晶体能够得到一个较好的具有两个宽带隙且大的中间频率的光子带隙。采用微机电(MEMS)技术制作了比例分别为0.4、0.5和0.6的正三角形晶格圆孔阵列组成的金/二氧化硅/硅光子晶体,利用傅里叶变换红外光谱仪测量其反射光谱。实验结果表明,比例为0.5时,该结构能够获得较强的光透射增强效果和较窄的透射峰。
Abstract
Three different horizontal proportions of geometry(the ratio of hole diameter to lattice spacing) are designed to investigate the effect of different proportions on extraordinary transmission characteristics of the photonic crystal combined with gold/silicon dioxide/silicon round holes array. The plane wave expansion method is used to simulate the photonic band gap of silicon photonic crystal under the conditions of three different horizontal ratios of geometry(0.4; 0.5; 0.6). For silicon photonic crystal combined with regular triangle lattice, it is found from theoretical simulations that with the ratio being 0.5, the desired photonic band gap with two wider band gaps and large middle frequency can be achieved. At the same time, gold/silicon dioxide/silicon photonic crystals combined with regular triangle lattice round holes array with the ratio being 0.4, 0.5 and 0.6 respectively are fabricated using MEMS technology, and their reflectance spectrums are measured using Fourier transform infrared spectrometer. Experimental results prove that with the ratio being 0.5, the structure can obtain stonger light transmission enhancement and narrower transmission peak.
肖功利, 杨宏艳. 几何横向比例对金属孔阵列强透射特性的影响[J]. 半导体光电, 2011, 32(2): 220. XIAO Gongli, YANG Hongyan. Effect of Horizontal Proportion of Geometry on Extraordinary Transmission Characteristics of Metal Hole Array[J]. Semiconductor Optoelectronics, 2011, 32(2): 220.